NTGD1100L Series

Dual P-Channel Small Signal MOSFET with Level-Shift -8V, -3.3A, 55mΩ

Catalog

Dual P-Channel Small Signal MOSFET with Level-Shift -8V, -3.3A, 55mΩ

Part	Voltage - Load [Min]	Voltage - Load [Max]	Switch Type	Interface	Output Configuration	Current - Output (Max) [Max]	Ratio - Input:Output [custom]	Output Type	Rds On (Typ)	Mounting Type	Supplier Device Package	Number of Outputs	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case
ON Semiconductor NTGD1100LT1	1.8 V	8 V	General Purpose	On/Off	High Side	3.3 A	1:1	P-Channel	40 mOhm	Surface Mount	6-TSOP	1	-55 °C	150 °C	SOT-23-6 Thin TSOT-23-6
ON Semiconductor NTGD1100LT1G	1.8 V	8 V	General Purpose	On/Off	High Side	3.3 A	1:1	P-Channel	40 mOhm	Surface Mount	6-TSOP	1	-55 °C	150 °C	SOT-23-6 Thin TSOT-23-6

Catalog

Dual P-Channel Small Signal MOSFET with Level-Shift -8V, -3.3A, 55mΩ

Key Features

• Extremely Low RDS(on)Load Switch MOSFET

• Level Shift MOSFET is ESD Protected

• Low Profile, Small Footprint Package

• VINRange 1.8 to 8.0 V

• ON/OFF Range 1.5 to 8.0 V

• ESD Rating of 2000 V

• RoHS Compliant

Description

The NTGD1100L integrates a P and N-Channel MOSFET in a single package. This device is particularly suited for portable electronic equipment where low control signals, low battery voltages and high load currents are needed. The P-Channel device is specifically designed as a load switch using ON Semiconductor state-of-the-art trench technology. The N-Channel, with an external resistor (R1), functions as a level-shift to drive the P-Channel. The N-Channel MOSFET has internal ESD protection and can be driven by logic signals as low as 1.5 V. The NTGD1100L operates on supply lines from 1.8 to 8.0 V and can drive loads up to 3.3 A with 8.0 V applied to both VINand VON/OFF