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Technical Specifications
Parameters and characteristics for this part
| Specification | NTGD1100LT1 |
|---|---|
| Current - Output (Max) [Max] | 3.3 A |
| Interface | On/Off |
| Mounting Type | Surface Mount |
| Number of Outputs | 1 |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Output Configuration | High Side |
| Output Type | P-Channel |
| Package / Case | TSOT-23-6, SOT-23-6 Thin |
| Ratio - Input:Output [custom] | 1:1 |
| Rds On (Typ) | 40 mOhm |
| Supplier Device Package | 6-TSOP |
| Switch Type | General Purpose |
| Voltage - Load [Max] | 8 V |
| Voltage - Load [Min] | 1.8 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
NTGD1100L Series
The NTGD1100L integrates a P and N-Channel MOSFET in a single package. This device is particularly suited for portable electronic equipment where low control signals, low battery voltages and high load currents are needed. The P-Channel device is specifically designed as a load switch using ON Semiconductor state-of-the-art trench technology. The N-Channel, with an external resistor (R1), functions as a level-shift to drive the P-Channel. The N-Channel MOSFET has internal ESD protection and can be driven by logic signals as low as 1.5 V. The NTGD1100L operates on supply lines from 1.8 to 8.0 V and can drive loads up to 3.3 A with 8.0 V applied to both VINand VON/OFF
Documents
Technical documentation and resources