Technical Specifications
Parameters and characteristics for this part
| Specification | HGTG30N60A4D |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 75 A |
| Current - Collector Pulsed (Icm) | 240 A |
| Gate Charge | 225 nC |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-3 |
| Power - Max [Max] | 463 W |
| Reverse Recovery Time (trr) | 55 ns |
| Supplier Device Package | TO-247-3 |
| Switching Energy [custom] | 240 µJ |
| Switching Energy [custom] | 280 µJ |
| Td (on/off) @ 25°C | 150 ns, 25 ns |
| Test Condition | 390 V, 3 Ohm, 30 A, 15 V |
| Vce(on) (Max) @ Vge, Ic | 2.6 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 600 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
HGTG30N60A4D Series
The HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49170. The diode used in anti-parallel with the IGBT is the development type TA49053.The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.Formerly Developmental Type TA49172.
Documents
Technical documentation and resources