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TO-247-3 AB EP
Discrete Semiconductor Products

HGTG30N60B3D

Obsolete
ON Semiconductor

IGBT 600V 60A TO247-3

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TO-247-3 AB EP
Discrete Semiconductor Products

HGTG30N60B3D

Obsolete
ON Semiconductor

IGBT 600V 60A TO247-3

Technical Specifications

Parameters and characteristics for this part

SpecificationHGTG30N60B3D
Current - Collector (Ic) (Max) [Max]60 A
Current - Collector Pulsed (Icm)220 A
Gate Charge170 nC
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power - Max [Max]208 W
Reverse Recovery Time (trr)55 ns
Supplier Device PackageTO-247-3
Switching Energy680 µJ, 550 µJ
Td (on/off) @ 25°C36 ns, 137 ns
Test Condition30 A, 480 V, 3 Ohm, 15 V
Vce(on) (Max) @ Vge, Ic1.9 V
Voltage - Collector Emitter Breakdown (Max) [Max]600 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

HGTG30N60A4D Series

The HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49170. The diode used in anti-parallel with the IGBT is the development type TA49053.The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.Formerly Developmental Type TA49172.