HGTG30N60A4D Series

600V, SMPS IGBT

Catalog

600V, SMPS IGBT

Part	Reverse Recovery Time (trr)	Td (on/off) @ 25°C	Power - Max [Max]	Switching Energy	Supplier Device Package	Vce(on) (Max) @ Vge, Ic	Package / Case	Mounting Type	Test Condition	Current - Collector (Ic) (Max) [Max]	Gate Charge	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector Pulsed (Icm)	Operating Temperature [Min]	Operating Temperature [Max]	Switching Energy [custom]	Switching Energy [custom]
ON Semiconductor HGTG30N60B3D	55 ns	36 ns 137 ns	208 W	550 µJ 680 µJ	TO-247-3	1.9 V	TO-247-3	Through Hole	3 Ohm 15 V 30 A 480 V	60 A	170 nC	600 V	220 A	-55 °C	150 °C
ON Semiconductor HGTG30N60A4D	55 ns	25 ns 150 ns	463 W		TO-247-3	2.6 V	TO-247-3	Through Hole	3 Ohm 15 V 30 A 390 V	75 A	225 nC	600 V	240 A	-55 °C	150 °C	240 µJ	280 µJ

Catalog

600V, SMPS IGBT

Key Features

• <lt/>100kHz Operation at 390V, 30A

• 200kHz Operation at 390V, 18A

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . 60ns at T<sub>J</sub> = 125&°C

• Low Conduction Loss

• Temperature Compensating SABER<sup>™Model

Description

The HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49170. The diode used in anti-parallel with the IGBT is the development type TA49053.The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.Formerly Developmental Type TA49172.