Discrete Semiconductor Products
IRF630
ActiveSTMicroelectronics
N-CHANNEL 200 V, 0.35 OHM TYP., 9 A POWER MOSFET IN DPAK PACKAGE
Discrete Semiconductor Products
IRF630
ActiveSTMicroelectronics
N-CHANNEL 200 V, 0.35 OHM TYP., 9 A POWER MOSFET IN DPAK PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | IRF630 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 9 A |
| Drain to Source Voltage (Vdss) | 200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 700 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -65 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) | 75 W |
| Rds On (Max) @ Id, Vgs | 400 mOhm |
| Supplier Device Package | TO-220 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 10306 | $ 1.73 | |
| 22729 | $ 1.25 | |||
| Tube | 353 | $ 0.85 | ||
Description
General part information
IRF630 Series
This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters.
Documents
Technical documentation and resources