IRF630 Series

N-channel 200 V, 0.35 Ohm typ., 9 A Power MOSFET in DPAK package

Catalog

N-channel 200 V, 0.35 Ohm typ., 9 A Power MOSFET in DPAK package

Part	FET Type	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Technology	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Vgs (Max)
STMicroelectronics IRF630	N-Channel	TO-220	10 V	TO-220-3	4 V	700 pF	Through Hole	150 °C	-65 °C	9 A	200 V	400 mOhm	MOSFET (Metal Oxide)	45 nC	75 W	20 V

Catalog

N-channel 200 V, 0.35 Ohm typ., 9 A Power MOSFET in DPAK package

Description

This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters.