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8-SOIC
Discrete Semiconductor Products

SI4435FDY-T1-GE3

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8-SOIC
Discrete Semiconductor Products

SI4435FDY-T1-GE3

Active

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationSI4435FDY-T1-GE3
Current - Continuous Drain (Id) @ 25°C12.6 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs42 nC
Input Capacitance (Ciss) (Max) @ Vds1500 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-SOIC
Package / Case [x]0.154 in
Package / Case [y]3.9 mm
Power Dissipation (Max)4.8 W
Rds On (Max) @ Id, Vgs19 mOhm
Supplier Device Package8-SOIC
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id [Max]2.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.47
10$ 0.36
100$ 0.22
500$ 0.20
1000$ 0.14
Digi-Reel® 1$ 0.47
10$ 0.36
100$ 0.22
500$ 0.20
1000$ 0.14
Tape & Reel (TR) 2500$ 0.13
5000$ 0.12
12500$ 0.11
25000$ 0.11
62500$ 0.10

Description

General part information

SI4435 Series

P-Channel 30 V 12.6A (Tc) 4.8W (Tc) Surface Mount 8-SOIC

Documents

Technical documentation and resources