SI4435 Series

Catalog

MOSFET P-CH 30V 7A 8SO

Part	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Mounting Type	FET Type	Package / Case	Package / Case [y]	Package / Case [x]	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Power Dissipation (Max)	Vgs (Max)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id [Max]	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs [Max]
Vishay General Semiconductor - Diodes Division SI4435BDY-T1-E3	MOSFET (Metal Oxide)	70 nC	20 mOhm	3 V	Surface Mount	P-Channel	8-SOIC	3.9 mm	0.154 in	7 A	4.5 V 10 V	-55 °C	150 °C	8-SOIC	1.5 W	20 V	30 V
Vishay General Semiconductor - Diodes Division SI4435FDY-T1-GE3	MOSFET (Metal Oxide)		19 mOhm		Surface Mount	P-Channel	8-SOIC	3.9 mm	0.154 in	12.6 A	4.5 V 10 V	-55 °C	150 °C	8-SOIC	4.8 W	20 V	30 V	1500 pF	2.2 V	42 nC
Vishay General Semiconductor - Diodes Division SI4435DDY-T1-E3	MOSFET (Metal Oxide)	50 nC		3 V	Surface Mount	P-Channel	8-SOIC	3.9 mm	0.154 in	11.4 A	4.5 V 10 V	-55 °C	150 °C	8-SOIC	2.5 W 5 W	20 V	30 V	1350 pF			24 mOhm