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8-SOIC
Discrete Semiconductor Products

SI4435DDY-T1-E3

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8-SOIC
Discrete Semiconductor Products

SI4435DDY-T1-E3

Active

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationSI4435DDY-T1-E3
Current - Continuous Drain (Id) @ 25°C11.4 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]50 nC
Input Capacitance (Ciss) (Max) @ Vds1350 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-SOIC
Package / Case [x]0.154 in
Package / Case [y]3.9 mm
Power Dissipation (Max)2.5 W, 5 W
Rds On (Max) @ Id, Vgs [Max]24 mOhm
Supplier Device Package8-SOIC
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.72
10$ 0.62
100$ 0.43
500$ 0.36
1000$ 0.31
Digi-Reel® 1$ 0.72
10$ 0.62
100$ 0.43
500$ 0.36
1000$ 0.31
Tape & Reel (TR) 2500$ 0.27
5000$ 0.26
12500$ 0.24
25000$ 0.24

Description

General part information

SI4435 Series

P-Channel 30 V 11.4A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SOIC

Documents

Technical documentation and resources