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Discrete Semiconductor Products

NDD04N60Z-1G

Obsolete
ON Semiconductor

POWER MOSFET 600V 4.1A 2 OHM SINGLE N-CHANNEL DPAK

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IPAK
Discrete Semiconductor Products

NDD04N60Z-1G

Obsolete
ON Semiconductor

POWER MOSFET 600V 4.1A 2 OHM SINGLE N-CHANNEL DPAK

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationNDD04N60Z-1G
Current - Continuous Drain (Id) @ 25°C4.1 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs29 nC
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseIPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max)83 W
Rds On (Max) @ Id, Vgs2 Ohm
Supplier Device PackageIPAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

NDD04N60Z Series

Power MOSFET 500V 2.7 Ohm Single N-Channel

Documents

Technical documentation and resources