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TO-252-3

Discrete Semiconductor Products

NDD04N60ZT4G

Obsolete

ON Semiconductor

POWER MOSFET 600V 4.1A 2 OHM SINGLE N-CHANNEL DPAK

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Search across all available documentation for this part.

DocumentsDatasheet Package Drawing-369AA-DPAK 4 LEAD Single Gauge Surface Mount +1

TO-252-3

Discrete Semiconductor Products

NDD04N60ZT4G

Obsolete

ON Semiconductor

POWER MOSFET 600V 4.1A 2 OHM SINGLE N-CHANNEL DPAK

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DocumentsDatasheet Package Drawing-369AA-DPAK 4 LEAD Single Gauge Surface Mount +1

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	NDD04N60ZT4G

Current - Continuous Drain (Id) @ 25°C	4.1 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	29 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	83 W
Rds On (Max) @ Id, Vgs	2 Ohm
Supplier Device Package	DPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

NDD04N60Z Series

Power MOSFET 500V 2.7 Ohm Single N-Channel

Documents

Technical documentation and resources

Datasheet

Package Drawing-369AA-DPAK 4 LEAD Single Gauge Surface Mount

Package Drawing

Datasheet

NDD04N60Z Series

Power MOSFET 500V 3.4A 2.7 Ohm Single N-Channel DPAK

Part	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	Package / Case	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	FET Type	Vgs(th) (Max) @ Id	Supplier Device Package	Rds On (Max) @ Id, Vgs	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)
ON Semiconductor NDD04N50Z-1G	61 W	308 pF	500 V	IPAK TO-251-3 Short Leads TO-251AA	3 A	30 V	N-Channel	4.5 V	IPAK	2.7 Ohm	Through Hole	12 nC	MOSFET (Metal Oxide)	10 V	-55 °C	150 °C
ON Semiconductor NDD04N60ZT4G			600 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	4.1 A	30 V	N-Channel	4.5 V	DPAK	2 Ohm	Surface Mount		MOSFET (Metal Oxide)	10 V	-55 °C	150 °C	29 nC	83 W
ON Semiconductor NDD04N60Z-1G			600 V	IPAK TO-251-3 Short Leads TO-251AA	4.1 A	30 V	N-Channel	4.5 V	IPAK	2 Ohm	Through Hole		MOSFET (Metal Oxide)	10 V	-55 °C	150 °C	29 nC	83 W