A2T21S260-12SR3

Obsolete

AIRFAST RF POWER LDMOS TRANSISTOR 2110-2170 MHZ, 65 W AVG., 28 V/ REEL ROHS COMPLIANT: YES

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Discrete Semiconductor Products

Obsolete

AIRFAST RF POWER LDMOS TRANSISTOR 2110-2170 MHZ, 65 W AVG., 28 V/ REEL ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Part	Power - Output	Supplier Device Package	Current - Test	Package / Case	Voltage - Rated	Gain	Mounting Type	Frequency [Max]	Frequency [Min]	Voltage - Test	Current Rating (Amps)	Configuration	Frequency	Technology
Freescale Semiconductor - NXP A2T21H450W19SR6	390 W	NI-1230S-4S4S	800 mA	NI-1230S-4S4S	65 V	15.7 dB	Chassis Mount	2.2 GHz	2.11 GHz	30 V	10 µA
Freescale Semiconductor - NXP A2T21H140-24SR3	169 W	OM780-4	350 mA	OM780-4	65 V	17.4 dB		2.17 GHz	2.11 GHz	28 V	10 µA	Dual
Freescale Semiconductor - NXP A2T21S260-12SR3	65 W	NI-780-2S2L	1.2 A	NI-780-2S2L	65 V	18.7 dB	Chassis Mount			28 V			2.17 GHz
Freescale Semiconductor - NXP A2T21H141W24SR3
Freescale Semiconductor - NXP A2T21H450W19SR6	89 W	NI-1230S-4S4S	800 mA	NI-1230S-4S4S	65 V	15.7 dB	Chassis Mount	2.2 GHz	2.11 GHz	30 V	10 µA
Freescale Semiconductor - NXP A2T21H410-24SR6	72 W	NI-1230-4LS2L	600 mA	NI-1230-4LS2L	65 V	15.6 dB	Chassis Mount			28 V		Dual	2.17 GHz
Freescale Semiconductor - NXP A2T21S161W12SR3	38 W	NI-780-2S2L		NI-780-2S2L	28 V		Chassis Mount	2.2 GHz	2.11 GHz
Freescale Semiconductor - NXP A2T21H100-25SR3												N-Channel		MOSFET (Metal Oxide)
Freescale Semiconductor - NXP A2T21S160-12SR3	38 W	NI-780-2S2L	600 mA	NI-780-2S2L	65 V	18.4 dB	Chassis Mount			28 V			2.17 GHz

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Newark	Each	25	$ 168.78

General part information

RF Mosfet 28 V 1.2 A 2.17GHz 18.7dB 65W NI-780-2S2L

Technical documentation and resources

No documents available