A2T21H450W19SR6

Obsolete

RF MOSFET LDMOS 30V NI1230

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Discrete Semiconductor Products

Obsolete

RF MOSFET LDMOS 30V NI1230

Technical Specifications

Parameters and characteristics for this part

Part	Current Rating	Frequency (Min)	Frequency (Max)	Package / Case	Power - Output	Current - Test	Mounting Type	Package Name	Technology	Gain	Voltage - Rated	Voltage - Test	Configuration	Frequency
NXP USA Inc. A2T21H450W19SR6	10 µA	2.11 GHz	2.2 GHz	NI-1230S-4S4S	390 W	800 mA	Chassis Mount	NI-1230S-4S4S	LDMOS	15.7 dB	65 V	30 V
NXP USA Inc. A2T21H140-24SR3	10 µA	2.11 GHz	2.17 GHz	OM780-4	169 W	350 mA		OM780-4	LDMOS	17.4 dB	65 V	28 V	Dual
NXP USA Inc. A2T21S260-12SR3				NI-780-2S2L	65 W	1.2 A	Chassis Mount	NI-780-2S2L	LDMOS	18.7 dB	65 V	28 V		2.17 GHz
NXP USA Inc. A2T21H141W24SR3
NXP USA Inc. A2T21S260W12NR3	10 µA	2.11 GHz	2.2 GHz	OM-880X-2L2L	218 W	1.6 A	Chassis Mount	OM-880X-2L2L	LDMOS	17.9 dB	65 V	28 V
NXP USA Inc. A2T21H450W19SR6	10 µA	2.11 GHz	2.2 GHz	NI-1230S-4S4S	89 W	800 mA	Chassis Mount	NI-1230S-4S4S	LDMOS	15.7 dB	65 V	30 V
NXP USA Inc. A2T21H410-24SR6				NI-1230-4LS2L	72 W	600 mA	Chassis Mount	NI-1230-4LS2L	LDMOS	15.6 dB	65 V	28 V	Dual	2.17 GHz
NXP USA Inc. A2T21S161W12SR3		2.11 GHz	2.2 GHz	NI-780-2S2L	38 W		Chassis Mount	NI-780-2S2L	LDMOS		28 V
NXP USA Inc. A2T21H100-25SR3									MOSFET (Metal Oxide)				N-Channel
NXP USA Inc. A2T21S160-12SR3				NI-780-2S2L	38 W	600 mA	Chassis Mount	NI-780-2S2L	LDMOS	18.4 dB	65 V	28 V		2.17 GHz

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

3D models and CAD resources for this part

General part information

RF Mosfet 30 V 800 mA 2.11GHz ~ 2.2GHz 15.7dB 390W NI-1230S-4S4S

Technical documentation and resources