A2T21H100-25SR3

LTB

AIRFAST RF POWER LDMOS TRANSISTOR 2110-2170 MHZ, 18 W AVG., 28 V/ REEL ROHS COMPLIANT: YES

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Discrete Semiconductor Products

LTB

AIRFAST RF POWER LDMOS TRANSISTOR 2110-2170 MHZ, 18 W AVG., 28 V/ REEL ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Part	Current Rating	Frequency (Min)	Frequency (Max)	Package / Case	Power - Output	Current - Test	Mounting Type	Package Name	Technology	Gain	Voltage - Rated	Voltage - Test	Configuration	Frequency
NXP USA Inc. A2T21H450W19SR6	10 µA	2.11 GHz	2.2 GHz	NI-1230S-4S4S	390 W	800 mA	Chassis Mount	NI-1230S-4S4S	LDMOS	15.7 dB	65 V	30 V
NXP USA Inc. A2T21H140-24SR3	10 µA	2.11 GHz	2.17 GHz	OM780-4	169 W	350 mA		OM780-4	LDMOS	17.4 dB	65 V	28 V	Dual
NXP USA Inc. A2T21S260-12SR3				NI-780-2S2L	65 W	1.2 A	Chassis Mount	NI-780-2S2L	LDMOS	18.7 dB	65 V	28 V		2.17 GHz
NXP USA Inc. A2T21H141W24SR3
NXP USA Inc. A2T21S260W12NR3	10 µA	2.11 GHz	2.2 GHz	OM-880X-2L2L	218 W	1.6 A	Chassis Mount	OM-880X-2L2L	LDMOS	17.9 dB	65 V	28 V
NXP USA Inc. A2T21H450W19SR6	10 µA	2.11 GHz	2.2 GHz	NI-1230S-4S4S	89 W	800 mA	Chassis Mount	NI-1230S-4S4S	LDMOS	15.7 dB	65 V	30 V
NXP USA Inc. A2T21H410-24SR6				NI-1230-4LS2L	72 W	600 mA	Chassis Mount	NI-1230-4LS2L	LDMOS	15.6 dB	65 V	28 V	Dual	2.17 GHz
NXP USA Inc. A2T21S161W12SR3		2.11 GHz	2.2 GHz	NI-780-2S2L	38 W		Chassis Mount	NI-780-2S2L	LDMOS		28 V
NXP USA Inc. A2T21H100-25SR3									MOSFET (Metal Oxide)				N-Channel
NXP USA Inc. A2T21S160-12SR3				NI-780-2S2L	38 W	600 mA	Chassis Mount	NI-780-2S2L	LDMOS	18.4 dB	65 V	28 V		2.17 GHz

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	Tape & Reel (TR)	250	$ 82.42	1m+
Newark	Each	250	$ 100.44	1m+

3D models and CAD resources for this part

General part information

RF Mosfet

Technical documentation and resources