Discrete Semiconductor Products

FQA13N80-F109

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ON Semiconductor

POWER MOSFET, N-CHANNEL, QFET®, 800 V, 12.6 A, 750 MΩ, TO-3P

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Discrete Semiconductor Products

FQA13N80-F109

Active

ON Semiconductor

POWER MOSFET, N-CHANNEL, QFET®, 800 V, 12.6 A, 750 MΩ, TO-3P

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	FQA13N80-F109

Current - Continuous Drain (Id) @ 25°C	12.6 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	88 nC
Input Capacitance (Ciss) (Max) @ Vds	3500 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-65-3, TO-3P-3
Power Dissipation (Max) [Max]	300 W
Rds On (Max) @ Id, Vgs	750 mOhm
Supplier Device Package	TO-3PN
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

FQA13N50C-F109 Series

Power MOSFET, N-Channel, QFET®, 500 V, 13.5 A, 480 mΩ, TO-3P

Part	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Supplier Device Package	Rds On (Max) @ Id, Vgs	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)
ON Semiconductor FQA13N80-F109	N-Channel	3500 pF	SC-65-3 TO-3P-3	30 V	88 nC	10 V	800 V	300 W	TO-3PN	750 mOhm	Through Hole	12.6 A	5 V	MOSFET (Metal Oxide)	-55 °C	150 °C
ON Semiconductor FQA13N50C-F109	N-Channel	2055 pF	SC-65-3 TO-3P-3	30 V	56 nC	10 V	500 V		TO-3P	480 mOhm	Through Hole		4 V	MOSFET (Metal Oxide)	-55 °C	150 °C	218 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 6.70
		10	$ 4.52
		100	$ 3.29
		500	$ 2.80
Newark	Each	250	$ 3.07
		500	$ 2.98
ON Semiconductor	N/A	1	$ 2.98

Description

General part information

FQA13N50C-F109 Series

These N-Channel enhancement mode power field effect transistors are produced using a proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

Documents

Technical documentation and resources

Datasheet

Package Drawing-340BZ-TO-3P-3LD / EIAJ SC-65, ISOLATED

Package Drawing

Product Change Notice EN

Datasheet