FQA13N50C-F109

Obsolete

ON Semiconductor

POWER MOSFET, N-CHANNEL, QFET®, 500 V, 13.5 A, 480 MΩ, TO-3P

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DocumentsDatasheet Package Drawing-340BZ-TO-3P-3LD / EIAJ SC-65, ISOLATED

Discrete Semiconductor Products

FQA13N50C-F109

Obsolete

ON Semiconductor

POWER MOSFET, N-CHANNEL, QFET®, 500 V, 13.5 A, 480 MΩ, TO-3P

Deep-Dive with AI

DocumentsDatasheet Package Drawing-340BZ-TO-3P-3LD / EIAJ SC-65, ISOLATED

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	FQA13N50C-F109

Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	56 nC
Input Capacitance (Ciss) (Max) @ Vds	2055 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-65-3, TO-3P-3
Power Dissipation (Max)	218 W
Rds On (Max) @ Id, Vgs	480 mOhm
Supplier Device Package	TO-3P
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

FQA13N50C-F109 Series

Power MOSFET, N-Channel, QFET®, 500 V, 13.5 A, 480 mΩ, TO-3P

Part	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Supplier Device Package	Rds On (Max) @ Id, Vgs	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)
ON Semiconductor FQA13N80-F109	N-Channel	3500 pF	SC-65-3 TO-3P-3	30 V	88 nC	10 V	800 V	300 W	TO-3PN	750 mOhm	Through Hole	12.6 A	5 V	MOSFET (Metal Oxide)	-55 °C	150 °C
ON Semiconductor FQA13N50C-F109	N-Channel	2055 pF	SC-65-3 TO-3P-3	30 V	56 nC	10 V	500 V		TO-3P	480 mOhm	Through Hole		4 V	MOSFET (Metal Oxide)	-55 °C	150 °C	218 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FQA13N50C-F109 Series

These N-Channel enhancement mode power field effect transistors are produced using a proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.