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6-VDFN_506AN
Discrete Semiconductor Products

NTLJD3182FZTAG

Obsolete
ON Semiconductor

MOSFET P-CH 20V 2.2A 6WDFN

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6-VDFN_506AN
Discrete Semiconductor Products

NTLJD3182FZTAG

Obsolete
ON Semiconductor

MOSFET P-CH 20V 2.2A 6WDFN

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationNTLJD3182FZTAG
Current - Continuous Drain (Id) @ 25°C2.2 A
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On)4.5 V, 1.8 V
FET FeatureSchottky Diode (Isolated)
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]7.8 nC
Input Capacitance (Ciss) (Max) @ Vds450 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Power Dissipation (Max)710 mW
Rds On (Max) @ Id, Vgs100 mOhm
Supplier Device Package6-WDFN (2x2)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)8 V
Vgs(th) (Max) @ Id1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

NTLJD3181PZ Series

Power MOSFET Complementary -20V with ESD Protected Gate, 100mΩ © -4.5V, 2x2x0.8mm WDFN Package

Documents

Technical documentation and resources

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