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6-VDFN_506AN

Discrete Semiconductor Products

NTLJD3181PZTBG

Obsolete

ON Semiconductor

POWER MOSFET 20V 3.2A 100 MOHM DUAL P−CHANNEL WDFN6 WITH ESD

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Search across all available documentation for this part.

DocumentsDatasheet Package Drawing-506AN-WDFN6 2x2, 0.65P +1

6-VDFN_506AN

Discrete Semiconductor Products

NTLJD3181PZTBG

Obsolete

ON Semiconductor

POWER MOSFET 20V 3.2A 100 MOHM DUAL P−CHANNEL WDFN6 WITH ESD

Deep-Dive with AI

DocumentsDatasheet Package Drawing-506AN-WDFN6 2x2, 0.65P +1

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	NTLJD3181PZTBG

Configuration	2 P-Channel
Current - Continuous Drain (Id) @ 25°C	2.2 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	7.8 nC
Input Capacitance (Ciss) (Max) @ Vds	450 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Power - Max [Max]	710 mW
Rds On (Max) @ Id, Vgs	100 mOhm
Supplier Device Package	6-WDFN (2x2)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

NTLJD3181PZ Series

Power MOSFET Complementary -20V with ESD Protected Gate, 100mΩ © -4.5V, 2x2x0.8mm WDFN Package

Documents

Technical documentation and resources

Datasheet

Package Drawing-506AN-WDFN6 2x2, 0.65P

Package Drawing

Datasheet

NTLJD3181PZ Series

Power MOSFET 20V 3.2A 100 mOhm Dual P−Channel WDFN6 with ESD

Part	Input Capacitance (Ciss) (Max) @ Vds	Technology	Mounting Type	Configuration	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Supplier Device Package	Vgs(th) (Max) @ Id	FET Feature	Power - Max [Max]	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	FET Type	Vgs (Max)	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)
ON Semiconductor NTLJD3183CZTBG	355 pF	MOSFET (Metal Oxide)	Surface Mount	N and P-Channel	-55 °C	150 °C	2.2 A 2.6 A	20 V	6-WDFN (2x2)	1 V	Logic Level Gate	710 mW	68 mOhm	7 nC
ON Semiconductor NTLJD3181PZTBG	450 pF	MOSFET (Metal Oxide)	Surface Mount	2 P-Channel	-55 °C	150 °C	2.2 A	20 V	6-WDFN (2x2)	1 V	Logic Level Gate	710 mW	100 mOhm	7.8 nC
ON Semiconductor NTLJD3182FZTAG	450 pF	MOSFET (Metal Oxide)	Surface Mount		-55 °C	150 °C	2.2 A	20 V	6-WDFN (2x2)	1 V	Schottky Diode (Isolated)		100 mOhm		P-Channel	8 V	710 mW	7.8 nC	1.8 V 4.5 V
ON Semiconductor NTLJD3181PZTAG	450 pF	MOSFET (Metal Oxide)	Surface Mount	2 P-Channel	-55 °C	150 °C	2.2 A	20 V	6-WDFN (2x2)	1 V	Logic Level Gate	710 mW	100 mOhm	7.8 nC