NTLJD3181PZ Series

Power MOSFET 20V 3.2A 100 mOhm Dual P−Channel WDFN6 with ESD

Catalog

Power MOSFET 20V 3.2A 100 mOhm Dual P−Channel WDFN6 with ESD

Part	Input Capacitance (Ciss) (Max) @ Vds	Technology	Mounting Type	Configuration	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Supplier Device Package	Vgs(th) (Max) @ Id	FET Feature	Power - Max [Max]	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	FET Type	Vgs (Max)	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)
ON Semiconductor NTLJD3183CZTBG	355 pF	MOSFET (Metal Oxide)	Surface Mount	N and P-Channel	-55 °C	150 °C	2.2 A 2.6 A	20 V	6-WDFN (2x2)	1 V	Logic Level Gate	710 mW	68 mOhm	7 nC
ON Semiconductor NTLJD3181PZTBG	450 pF	MOSFET (Metal Oxide)	Surface Mount	2 P-Channel	-55 °C	150 °C	2.2 A	20 V	6-WDFN (2x2)	1 V	Logic Level Gate	710 mW	100 mOhm	7.8 nC
ON Semiconductor NTLJD3182FZTAG	450 pF	MOSFET (Metal Oxide)	Surface Mount		-55 °C	150 °C	2.2 A	20 V	6-WDFN (2x2)	1 V	Schottky Diode (Isolated)		100 mOhm		P-Channel	8 V	710 mW	7.8 nC	1.8 V 4.5 V
ON Semiconductor NTLJD3181PZTAG	450 pF	MOSFET (Metal Oxide)	Surface Mount	2 P-Channel	-55 °C	150 °C	2.2 A	20 V	6-WDFN (2x2)	1 V	Logic Level Gate	710 mW	100 mOhm	7.8 nC

Power MOSFET 20V 3.2A 100 mOhm Dual P−Channel WDFN6 with ESD

• WDFN Package with Exposed Drain Pad

• Lowest RDS(on) Solution in 2x2 mm Package

• 1.8V RDS(on) Rating

• Low Profile, 2x2x0.8 mm

• Pin Out same as SC-88

• Pb-Free and Halide Free

• Optimized Battery and Load Switch Management in Portable Applications, such as Cell Phones, PMP, DSC, other Portable Devices