Specification	APT32M80J

Current - Continuous Drain (Id) @ 25°C	33 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	303 nC
Input Capacitance (Ciss) (Max) @ Vds	9326 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-227-4, miniBLOC
Power Dissipation (Max)	543 W
Rds On (Max) @ Id, Vgs	190 mOhm
Supplier Device Package	ISOTOP®
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

MOSFET-800V Series

800V FREDFET

Part	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	FET Type	Vgs(th) (Max) @ Id	Package / Case	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max) [Max]	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Technology	Vgs(th) (Max) @ Id [Max]	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)
Microchip Technology APT8020JLL	800 V	195 nC	30 V	N-Channel	5 V	SOT-227-4 miniBLOC	ISOTOP®	33 A	-55 °C	150 °C	520 W	Chassis Mount	5200 pF	200 mOhm	10 V	MOSFET (Metal Oxide)
Microchip Technology APT8011JLL	800 V			N-Channel		SOT-227-4 miniBLOC	ISOTOP®	51 A				Chassis Mount	9480 pF	110 mOhm		MOSFET (Metal Oxide)	5 V	650 nC
Microchip Technology APT48M80B2	800 V		30 V	N-Channel	5 V	TO-247-3 Variant	T-MAX™ [B2]	49 A	-55 °C	150 °C		Through Hole		190 mOhm	10 V	MOSFET (Metal Oxide)		305 nC	1135 W
Microchip Technology APT8020JFLL	800 V	195 nC		N-Channel	5 V	SOT-227-4 miniBLOC	ISOTOP®	33 A	-55 °C	150 °C		Chassis Mount	5200 pF	220 mOhm		MOSFET (Metal Oxide)
Microchip Technology APT8024JLL	800 V	160 nC	30 V	N-Channel	5 V	SOT-227-4 miniBLOC	ISOTOP®	29 A	-55 °C	150 °C		Chassis Mount	4670 pF	240 mOhm	10 V	MOSFET (Metal Oxide)			460 W
Microchip Technology APT32M80J	800 V	303 nC	30 V	N-Channel	5 V	SOT-227-4 miniBLOC	ISOTOP®	33 A	-55 °C	150 °C		Chassis Mount	9326 pF	190 mOhm	10 V	MOSFET (Metal Oxide)			543 W
Microchip Technology APT8020B2FLLG	800 V	195 nC		N-Channel	5 V	TO-247-3 Variant	T-MAX™ [B2]	38 A				Through Hole	5200 pF	220 mOhm		MOSFET (Metal Oxide)
Microchip Technology APT8056BVRG	800 V			N-Channel		TO-247-3	TO-247 [B]	16 A				Through Hole	4440 pF	560 mOhm		MOSFET (Metal Oxide)		275 nC
Microchip Technology APT8020B2LLG	800 V	195 nC	30 V	N-Channel	5 V	TO-247-3 Variant	T-MAX™ [B2]	38 A	-55 °C	150 °C	694 W	Through Hole	5200 pF	200 mOhm	10 V	MOSFET (Metal Oxide)
Microchip Technology APT48M80L	800 V		30 V	N-Channel	5 V	TO-264-3 TO-264AA	TO-264 [L]	49 A	-55 °C	150 °C		Through Hole		200 mOhm	10 V	MOSFET (Metal Oxide)		305 nC	1135 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	20	$ 33.42
Microchip Direct	TUBE	1	$ 33.42
		100	$ 28.86
		250	$ 27.78
		500	$ 27.11
		1000	$ 26.47
		5000	$ 25.62

Description

General part information

MOSFET-800V Series

Power MOS 8™ is a family of high speed, high voltage (500-1200 V) N-channel

switch-mode power transistors with lower EMI characteristics and lower cost

compared to previous generation devices. These MOSFETs / FREDFETs have been

Documents

Technical documentation and resources

APT32M80J

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APT32M80J

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Technical Specifications

MOSFET-800V Series

Pricing

Description

MOSFET-800V Series

Documents

High-Voltage Power Discretes and Modules

Datasheet

APT18M80B, APT18M80S MOSFET MOS8 800 V 18 A TO-247 Datasheet

APT48M80B2, APT48M80L MOSFET MOS8 800 V 48 A TO-247 MAX Datasheet

APT12M80B, APT12M80S MOSFET MOS8 800 V 12 A TO-247 Datasheet

APT24M80B, APT24M80S MOSFET MOS8 800 V 24 A TO-247 Datasheet

APT41M80B2, APT41M80L MOSFET MOS8 800 V 41 A TO-247 MAX Datasheet

APT32M80J MOSFET MOS8 800 V 32 A SOT-227 Datasheet

MOSFET-800V Series