Discrete Semiconductor Products
APT8020B2LLG
ActiveMicrochip Technology
POWER FIELD-EFFECT TRANSISTOR, 38A I(D), 800V, 0.2OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET
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Discrete Semiconductor Products
APT8020B2LLG
ActiveMicrochip Technology
POWER FIELD-EFFECT TRANSISTOR, 38A I(D), 800V, 0.2OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET
Technical Specifications
Parameters and characteristics for this part
| Specification | APT8020B2LLG |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 38 A |
| Drain to Source Voltage (Vdss) | 800 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 195 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 5200 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-3 Variant |
| Power Dissipation (Max) [Max] | 694 W |
| Rds On (Max) @ Id, Vgs | 200 mOhm |
| Supplier Device Package | T-MAX™ [B2] |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 30 | $ 34.44 | |
| Microchip Direct | TUBE | 1 | $ 34.44 | |
| 100 | $ 29.74 | |||
| 250 | $ 28.61 | |||
| 500 | $ 27.95 | |||
| 1000 | $ 27.27 | |||
| 5000 | $ 26.38 | |||
Description
General part information
MOSFET-800V Series
Power MOS 8™ is a family of high speed, high voltage (500-1200 V) N-channel
switch-mode power transistors with lower EMI characteristics and lower cost
compared to previous generation devices. These MOSFETs / FREDFETs have been
Documents
Technical documentation and resources
