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UDFN / 8
Integrated Circuits (ICs)

SST25WF080BT-40I/NP

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Microchip Technology

FLASH SERIAL-SPI 1.8V 8MBIT 8M X 1BIT 8-PIN USON EP T/R

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UDFN / 8
Integrated Circuits (ICs)

SST25WF080BT-40I/NP

Active
Microchip Technology

FLASH SERIAL-SPI 1.8V 8MBIT 8M X 1BIT 8-PIN USON EP T/R

Technical Specifications

Parameters and characteristics for this part

SpecificationSST25WF080BT-40I/NP
Clock Frequency40 MHz
Memory FormatFLASH
Memory InterfaceSPI
Memory Organization [custom]1 M
Memory Organization [custom]8 bits
Memory Size1024 KB
Memory TypeNon-Volatile
Mounting TypeSurface Mount
Operating Temperature [Max]85 °C
Operating Temperature [Min]-40 °C
Package / Case8-UFDFN Exposed Pad
Supplier Device Package8-USON (2x3)
TechnologyFLASH
Voltage - Supply [Max]1.95 V
Voltage - Supply [Min]1.65 V
Write Cycle Time - Word, Page1 ms

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 3000$ 1.49
Microchip DirectT/R 1$ 1.60
25$ 1.52
100$ 1.45
1000$ 1.39
5000$ 1.30

Description

General part information

SST25WF080B Series

SST25WF080B is a member of the Serial Flash 25 Series family and feature a four-wire, SPI-compatible interface that allows for a low pin-count package which occupies less board space and ultimately lowers total system costs. SPI serial flash memory is manufactured with proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches.

This Serial Flash significantly improve performance and reliability, while lowering power consumption. The device writes (Program or Erase) with a single power supply of 1.65-1.95V. The total energy consumed is a function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash memory technologies.