SST25WF080B-40I/SN
ActiveFLASH MEMORY, NOR, SERIAL NOR, 8 MBIT, SPI, SOIC, 8 PINS
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SST25WF080B-40I/SN
ActiveFLASH MEMORY, NOR, SERIAL NOR, 8 MBIT, SPI, SOIC, 8 PINS
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Technical Specifications
Parameters and characteristics for this part
| Specification | SST25WF080B-40I/SN |
|---|---|
| Clock Frequency | 40 MHz |
| Memory Depth | 1 M |
| Memory Format | FLASH |
| Memory Interface (Type) | SPI |
| Memory Size | 1 MB |
| Memory Type | Non-Volatile |
| Memory Width | 8 bit |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 85 °C |
| Operating Temperature (Min) | -40 °C |
| Package Length | 0.154 in |
| Package Name | 8-SOIC |
| Package Width | 3.9 mm |
| Technology | FLASH |
| Voltage - Supply (Maximum) | 1.95 V |
| Voltage - Supply (Minimum) | 1.65 V |
| Write Cycle Time - Page | 1 ms |
| Write Cycle Time - Word | 1 ms |
| Part | Memory Interface (Type) | Operating Temperature (Max) | Operating Temperature (Min) | Memory Size | Memory Width | Memory Depth | Technology | Clock Frequency | Write Cycle Time - Page | Write Cycle Time - Word | Memory Type | Package Name | Voltage - Supply (Minimum) | Voltage - Supply (Maximum) | Package Length | Package Width | Memory Format | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Microchip Technology | SPI | 85 °C | -40 °C | 1 MB | 8 bit | 1 M | FLASH | 40 MHz | 1 ms | 1 ms | Non-Volatile | 8-SOIC | 1.65 V | 1.95 V | 0.154 in | 3.9 mm | FLASH | Surface Mount | |
 Microchip Technology | SPI | 85 °C | -40 °C | 1 MB | 8 bit | 1 M | FLASH | 40 MHz | 1 ms | 1 ms | Non-Volatile | 8-USON | 1.65 V | 1.95 V | 2 mm | 3 mm | FLASH | Surface Mount | 8-UFDFN Exposed Pad |
Microchip Technology | SPI | 85 °C | -40 °C | 1 MB | 8 bit | 1 M | FLASH | 40 MHz | 1 ms | 1 ms | Non-Volatile | 8-SOIC | 1.65 V | 1.95 V | 0.154 in | 3.9 mm | FLASH | Surface Mount | |
 Microchip Technology | SPI | 125 °C | -40 °C | 1 MB | 8 bit | 1 M | FLASH | 80 MHz | 1 ms | 1 ms | Non-Volatile | 8-SOIC | 1.65 V | 1.95 V | 0.154 in | 3.9 mm | FLASH | Surface Mount | |
 Microchip Technology | SPI | 85 °C | -40 °C | 1 MB | 8 bit | 1 M | FLASH | 40 MHz | 1 ms | 1 ms | Non-Volatile | 8-CSP | 1.65 V | 1.95 V | FLASH | Surface Mount | 8-UFBGA CSPBGA | ||
 Microchip Technology | SPI | 125 °C | -40 °C | 1 MB | 8 bit | 1 M | FLASH | 80 MHz | 1 ms | 1 ms | Non-Volatile | 8-SOIC | 1.65 V | 1.95 V | 0.154 in | 3.9 mm | FLASH | Surface Mount |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | Updated |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 1.28 | <1d |
| 25 | $ 1.25 | |||
| Microchip Direct | TUBE | 1 | $ 1.28 | 1m+ |
| 25 | $ 1.24 | |||
| 100 | $ 1.17 | |||
| 1000 | $ 1.12 | |||
| 5000 | $ 1.05 | |||
| Newark | Each | 100 | $ 1.22 | 1m+ |
| TME | N/A | 1 | $ 1.43 | <1d |
| 10 | $ 1.38 | |||
| 25 | $ 1.29 | |||
| 100 | $ 1.25 | |||
CAD
3D models and CAD resources for this part
Description
General part information
SST25WF080B Series
SST25WF080B is a member of the Serial Flash 25 Series family and feature a four-wire, SPI-compatible interface that allows for a low pin-count package which occupies less board space and ultimately lowers total system costs. SPI serial flash memory is manufactured with proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches.
This Serial Flash significantly improve performance and reliability, while lowering power consumption. The device writes (Program or Erase) with a single power supply of 1.65-1.95V. The total energy consumed is a function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash memory technologies.