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PowerPAK 1212-8
Discrete Semiconductor Products

SISA18ADN-T1-GE3

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Vishay General Semiconductor - Diodes Division

MOSFET N-CH 30V 38.3A PPAK1212-8

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PowerPAK 1212-8
Discrete Semiconductor Products

SISA18ADN-T1-GE3

Active
Vishay General Semiconductor - Diodes Division

MOSFET N-CH 30V 38.3A PPAK1212-8

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSISA18ADN-T1-GE3
Current - Continuous Drain (Id) @ 25°C38.3 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs21.5 nC
Input Capacitance (Ciss) (Max) @ Vds1000 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CasePowerPAK® 1212-8
Power Dissipation (Max)19.8 W, 3.2 W
Rds On (Max) @ Id, Vgs7.5 mOhm
Supplier Device PackagePowerPAK® 1212-8
TechnologyMOSFET (Metal Oxide)
Vgs (Max)-16 V, 20 V
Vgs(th) (Max) @ Id2.4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.62
10$ 0.53
100$ 0.37
500$ 0.29
1000$ 0.23
Digi-Reel® 1$ 0.62
10$ 0.53
100$ 0.37
500$ 0.29
1000$ 0.23
Tape & Reel (TR) 3000$ 0.21
6000$ 0.20
9000$ 0.18
30000$ 0.18

Description

General part information

SISA18 Series

N-Channel 30 V 38.3A (Tc) 3.2W (Ta), 19.8W (Tc) Surface Mount PowerPAK® 1212-8

Documents

Technical documentation and resources

No documents available