SISA18 Series

Catalog

N-CHANNEL 30 V (D-S) MOSFET POWE

Part	Power Dissipation (Max)	Mounting Type	Drain to Source Voltage (Vdss)	FET Type	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Package / Case	Rds On (Max) @ Id, Vgs	Technology	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds
Vishay General Semiconductor - Diodes Division SISA18BDN-T1-GE3	3.2 W 36.8 W	Surface Mount	30 V	N-Channel	19 nC	2.4 V	4.5 V 10 V	680 pF	PowerPAK® 1212-8PT	8-PowerWDFN	6.83 mOhm	MOSFET (Metal Oxide)	-16 V 20 V	-55 °C	150 °C	18 A 60 A
Vishay General Semiconductor - Diodes Division SISA18ADN-T1-GE3	3.2 W 19.8 W	Surface Mount	30 V	N-Channel	21.5 nC	2.4 V	4.5 V 10 V		PowerPAK® 1212-8	PowerPAK® 1212-8	7.5 mOhm	MOSFET (Metal Oxide)	-16 V 20 V	-55 °C	150 °C	38.3 A	1000 pF
Vishay General Semiconductor - Diodes Division SISA18DN-T1-GE3	3.2 W 19.8 W	Surface Mount	30 V	N-Channel	21.5 nC	2.4 V	4.5 V 10 V		PowerPAK® 1212-8	PowerPAK® 1212-8	7.5 mOhm	MOSFET (Metal Oxide)	-16 V 20 V	-55 °C	150 °C	38.3 A	1000 pF