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PowerPAK-1212-8PT
Discrete Semiconductor Products

SISA18BDN-T1-GE3

Active
Vishay General Semiconductor - Diodes Division

N-CHANNEL 30 V (D-S) MOSFET POWE

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PowerPAK-1212-8PT
Discrete Semiconductor Products

SISA18BDN-T1-GE3

Active
Vishay General Semiconductor - Diodes Division

N-CHANNEL 30 V (D-S) MOSFET POWE

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationSISA18BDN-T1-GE3
Current - Continuous Drain (Id) @ 25°C60 A, 18 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs19 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]680 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerWDFN
Power Dissipation (Max)36.8 W, 3.2 W
Rds On (Max) @ Id, Vgs6.83 mOhm
Supplier Device PackagePowerPAK® 1212-8PT
TechnologyMOSFET (Metal Oxide)
Vgs (Max)-16 V, 20 V
Vgs(th) (Max) @ Id2.4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.08
10$ 0.68
100$ 0.44
500$ 0.34
1000$ 0.31
Digi-Reel® 1$ 1.08
10$ 0.68
100$ 0.44
500$ 0.34
1000$ 0.31
Tape & Reel (TR) 3000$ 0.22

Description

General part information

SISA18 Series

N-Channel 30 V 18A (Ta), 60A (Tc) 3.2W (Ta), 36.8W (Tc) Surface Mount PowerPAK® 1212-8PT

Documents

Technical documentation and resources