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2SK4221
Discrete Semiconductor Products

FGAF40N60UFDTU

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ON Semiconductor

INSULATED GATE BIPOLAR TRANSISTO

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2SK4221
Discrete Semiconductor Products

FGAF40N60UFDTU

Active
ON Semiconductor

INSULATED GATE BIPOLAR TRANSISTO

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationFGAF40N60UFDTU
Current - Collector (Ic) (Max) [Max]40 A
Gate Charge77 nC
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-3P-3 Full Pack
Power - Max [Max]100 W
Reverse Recovery Time (trr)95 ns
Supplier Device PackageTO-3PF
Switching Energy130 µJ, 470 µJ
Td (on/off) @ 25°C65 ns, 15 ns
Test Condition20 A, 300 V, 15 V, 10 Ohm
Vce(on) (Max) @ Vge, Ic3 V
Voltage - Collector Emitter Breakdown (Max) [Max]600 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 122$ 2.48
122$ 2.48

Description

General part information

FGAF40N60UFD Series

Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 2ndgeneration IGBTs offer the optimum performance for consumer appliances, motion control and home appliances where low conduction and switching losses are essential.

Documents

Technical documentation and resources