Catalog
IGBT, 650 V, 40 A Field Stop Trench
Key Features
• Maximum junction temperature : TJ= 175°C
• Positive temperaure co-efficient for easy parallel operating
• High current capability
• Low saturation voltage: VCE(sat)= 1.6V(Typ.) @ IC= 40A
• High input impedance
• 100% of the Parts tested for ILM
• Fast switching
• Tightened parameter distribution
• RoHS compliant
• IGBT with monolithic reverse conducting diode
Description
AI
Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 2ndgeneration IGBTs offer the optimum performance for consumer appliances, motion control and home appliances where low conduction and switching losses are essential.