
Discrete Semiconductor Products
FGAF40S65AQ
ObsoleteON Semiconductor
IGBT, 650 V, 40 A FIELD STOP TRENCH

Discrete Semiconductor Products
FGAF40S65AQ
ObsoleteON Semiconductor
IGBT, 650 V, 40 A FIELD STOP TRENCH
Technical Specifications
Parameters and characteristics for this part
| Specification | FGAF40S65AQ |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 80 A |
| Gate Charge | 75 nC |
| IGBT Type | Trench Field Stop |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-3P-3 Full Pack |
| Power - Max [Max] | 94 W |
| Reverse Recovery Time (trr) | 274 ns |
| Supplier Device Package | TO-3PF-3 |
| Switching Energy | 62 µJ, 132 µJ |
| Td (on/off) @ 25°C | 81.6 ns, 17.8 ns |
| Test Condition | 400 V, 15 V, 6 Ohm, 10 A |
| Vce(on) (Max) @ Vge, Ic | 2.1 V |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 3.33 | |
| ON Semiconductor | N/A | 1 | $ 1.14 | |
Description
General part information
FGAF40N60UFD Series
Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 2ndgeneration IGBTs offer the optimum performance for consumer appliances, motion control and home appliances where low conduction and switching losses are essential.
Documents
Technical documentation and resources