Discrete Semiconductor Products

2N5238S

Active

Microchip Technology

170 V POWER BJT TO-39 ROHS COMPLIANT: YES

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DocumentsProduct Change Notice EN

Discrete Semiconductor Products

2N5238S

Active

Microchip Technology

170 V POWER BJT TO-39 ROHS COMPLIANT: YES

Deep-Dive with AI

DocumentsProduct Change Notice EN

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	2N5238S

Current - Collector Cutoff (Max) [Max]	10 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	50
Mounting Type	Through Hole
Package / Case	TO-39-3 Metal Can, TO-205AD
Power - Max [Max]	1 W
Supplier Device Package	TO-39
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	2.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]	170 V

JANTX2N5238S-Transistor Series

NPN Silicon Power Switching 70V to 120V, 10A

Part	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Supplier Device Package	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Mounting Type	Transistor Type	Vce Saturation (Max) @ Ib, Ic	Qualification	Grade	DC Current Gain (hFE) (Min) @ Ic, Vce
Microchip Technology 2N5238S	TO-205AD TO-39-3 Metal Can	50	TO-39	1 W	170 V	10 µA	Through Hole	NPN	2.5 V
Microchip Technology JANTX2N5238	TO-205AA TO-5-3 Metal Can		TO-5	1 W	170 V	10 µA	Through Hole	NPN	2.5 V	MIL-PRF-19500/394	Military	40 hFE
Microchip Technology JAN2N5238	TO-205AA TO-5-3 Metal Can		TO-5	1 W	170 V	10 µA	Through Hole	NPN	2.5 V	MIL-PRF-19500/394	Military	40 hFE
Microchip Technology 2N5238	TO-205AA TO-5-3 Metal Can	50	TO-5AA	1 W	170 V	10 µA	Through Hole	NPN	2.5 V
Microchip Technology JANTX2N5238S	TO-205AD TO-39-3 Metal Can		TO-39 (TO-205AD)	1 W	170 V	10 µA	Through Hole	NPN	2.5 V	MIL-PRF-19500/394	Military	40 hFE

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	100	$ 13.53
Newark	Each	100	$ 13.53
		500	$ 13.01

Description

General part information

JANTX2N5238S-Transistor Series

This specification covers the performance requirements for NPN, silicon, low-power, high voltage radiation hardened 2N4150, 2N5237 and 2N5238 transistors. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500/394. Two levels of product assurance are provided for each unencapsulated device type (JANHC and JANKC). Provisions for radiation hardness assurance (RHA) to eight radiation levels is provided for JANHC and JANKC product assurance levels. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements. The device package outlines are as follows: TO-5 and surfacemount U3 for all encapsulated device types. The dimensions and topography for JANHC and JANKC unencapsulated die are as outlined in MIL-PRF-19500/394.

Documents

Technical documentation and resources

Product Change Notice EN

Datasheet