2N5238
Active170 V POWER BJT TO-5 ROHS COMPLIANT: YES
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2N5238
Active170 V POWER BJT TO-5 ROHS COMPLIANT: YES
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Technical Specifications
Parameters and characteristics for this part
| Specification | 2N5238 |
|---|---|
| Current - Collector Cutoff (Max) [Max] | 10 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 50 |
| Mounting Type | Through Hole |
| Package / Case | TO-205AA, TO-5-3 Metal Can |
| Power - Max [Max] | 1 W |
| Supplier Device Package | TO-5AA |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 2.5 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 170 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 100 | $ 13.53 | |
| Microchip Direct | N/A | 1 | $ 14.57 | |
| Newark | Each | 100 | $ 13.53 | |
| 500 | $ 13.01 | |||
Description
General part information
JANTX2N5238S-Transistor Series
This specification covers the performance requirements for NPN, silicon, low-power, high voltage radiation hardened 2N4150, 2N5237 and 2N5238 transistors. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500/394. Two levels of product assurance are provided for each unencapsulated device type (JANHC and JANKC). Provisions for radiation hardness assurance (RHA) to eight radiation levels is provided for JANHC and JANKC product assurance levels. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements. The device package outlines are as follows: TO-5 and surfacemount U3 for all encapsulated device types. The dimensions and topography for JANHC and JANKC unencapsulated die are as outlined in MIL-PRF-19500/394.
Documents
Technical documentation and resources
