STI24N60M2
ActiveN-CHANNEL 600 V, 0.168 OHM TYP., 18 A MDMESH M2 POWER MOSFET IN I2PAK PACKAGE
STI24N60M2
ActiveN-CHANNEL 600 V, 0.168 OHM TYP., 18 A MDMESH M2 POWER MOSFET IN I2PAK PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STI24N60M2 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 18 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 29 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1060 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-262AA, TO-262-3 Long Leads, I2PAK |
| Power Dissipation (Max) | 150 W |
| Rds On (Max) @ Id, Vgs | 190 mOhm |
| Supplier Device Package | TO-262 (I2PAK) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 170 | $ 2.94 | |
| Tube | 1 | $ 2.31 | ||
| 50 | $ 1.86 | |||
| 100 | $ 1.53 | |||
| 500 | $ 1.29 | |||
| 1000 | $ 1.10 | |||
| 2000 | $ 1.04 | |||
| 5000 | $ 1.00 | |||
| 10000 | $ 0.97 | |||
Description
General part information
STI24 Series
These devices are N-channel Power MOSFETs developed using a new generation of MDmesh technology: MDmesh II Plus low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters.Extremely low gate chargeLower RDS(on)x area vs previous generationLow gate input resistance100% avalanche testedZener-protected
Documents
Technical documentation and resources
