Discrete Semiconductor Products

GE12050EEA3

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SIC 6N-CH 1200V 475A MODULE

Discrete Semiconductor Products

Active

SIC 6N-CH 1200V 475A MODULE

Technical Specifications

Parameters and characteristics for this part

Specification	GE12050EEA3

Channel Count	6
Configuration	N-Channel
Configuration - Features	3-Phase Bridge
Current - Continuous Drain (Id)	475 A
Current - Continuous Drain (Id) (Tc)	475 A
Drain to Source Voltage (Vdss)	1200 V
Gate Charge (Max)	1248 nC
Input Capacitance (Ciss) (Max)	29300 pF
Mounting Type	Chassis Mount
Operating Temperature (Max)	175 °C, 150 °C
Operating Temperature (Min)	-55 °C, -55 °C
Package / Case	Module
Package Name	Module
Power - Max	1250 W
Power - Max (Tc)	1250 W
Qualification	AEC-Q101
Rds On (Max)	4.4 mOhm
Technology	Silicon Carbide (SiC)
Vgs(th) (Max)	4.5 V

Part	Channel Count	Configuration	Configuration - Features	Package Name	Input Capacitance (Ciss) (Max)	Gate Charge (Max)	Rds On (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Qualification	Mounting Type	Technology	Drain to Source Voltage (Vdss)	Vgs(th) (Max)	Current - Continuous Drain (Id)	Package / Case	Power - Max	Power - Max (Tc)	Current - Continuous Drain (Id) (Tc)
GE Aerospace GE12050EEA3	6	N-Channel	3-Phase Bridge	Module	29300 pF	1248 nC	4.4 mOhm	-55 °C -55 °C	150 °C 175 °C	AEC-Q101	Chassis Mount	Silicon Carbide (SiC)	1200 V	4.5 V	475 A	Module	1250 W	1250 W	475 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	Bulk	1	$ 8799.00	<4d

3D models and CAD resources for this part

General part information

Mosfet Array 1200V (1.2kV) 475A (Tc) 1250W (Tc) Chassis Mount Module

Technical documentation and resources