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Discrete Semiconductor Products
MS8150-P2613
ActiveMicrochip Technology
GAAS SCHOTTKY NON HERMETIC FLIP
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Discrete Semiconductor Products
MS8150-P2613
ActiveMicrochip Technology
GAAS SCHOTTKY NON HERMETIC FLIP
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | MS8150-P2613 |
|---|---|
| Current - Max [Max] | 15 mA |
| Diode Type | Schottky - Single |
| Operating Temperature [Max] | 125 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | Die |
| Supplier Device Package | Chip |
| Voltage - Peak Reverse (Max) [Max] | 3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Microchip Direct | N/A | 1 | $ 12.83 | |
| 50 | $ 12.31 | |||
| 100 | $ 11.57 | |||
| 250 | $ 11.06 | |||
| 500 | $ 10.64 | |||
| 1000 | $ 10.43 | |||
Description
General part information
MS8000-GaAs-Flip-Chip-Schottky Series
MS8000 series of GaAs Schottky barrier diodes are available in packaged form and bondable chip configurations. These Schottky devices have low series resistance and low junction capacitance. The resulting low noise figure makes these diodes suitable for sensitive mixer and detector applications from below X band to beyond Ka band frequencies.