MS8000-GaAs-Flip-Chip-Schottky Series

GaAs-Flip-Chip-Schottky

Catalog

GaAs-Flip-Chip-Schottky

Part	Diode Type	Supplier Device Package	Voltage - Peak Reverse (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Current - Max [Max]	Package / Case	Resistance @ If, F	Capacitance @ Vr, F
Microchip Technology MS8150-P2613	Schottky - Single	Chip	3 V	-55 °C	125 °C	15 mA	Die
Microchip Technology MS8250-6498		Chip					Die
Microchip Technology MS8151-P2613	Schottky - Single	Chip	3 V	-55 °C	125 °C	15 mA	Die	9 Ohm	60 fF
Microchip Technology MS8250-P2920	Schottky - Anti-Parallel	Chip	3 V	-55 °C	125 °C	15 mA	Die	7 Ohm	80 fF

Catalog

GaAs-Flip-Chip-Schottky

Key Features

• * Low Noise Performance

• * High Cut-off Frequency

• * Passivated to Enhance Reliability

• * Packaged Diodes and Bondable Chips

Description

MS8000 series of GaAs Schottky barrier diodes are available in packaged form and bondable chip configurations. These Schottky devices have low series resistance and low junction capacitance. The resulting low noise figure makes these diodes suitable for sensitive mixer and detector applications from below X band to beyond Ka band frequencies.