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TO-220-3
Discrete Semiconductor Products

STP5NK65Z

Obsolete
STMicroelectronics

MOSFET N-CH 650V 5A TO220

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DocumentsDatasheet
TO-220-3
Discrete Semiconductor Products

STP5NK65Z

Obsolete
STMicroelectronics

MOSFET N-CH 650V 5A TO220

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationSTP5NK65Z
Current - Continuous Drain (Id) @ 25°C5 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]35 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]680 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max)85 W
Rds On (Max) @ Id, Vgs1.8 Ohm
Supplier Device PackageTO-220
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.84

Description

General part information

STP5N Series

N-Channel 650 V 5A (Tc) 85W (Tc) Through Hole TO-220

Documents

Technical documentation and resources