Discrete Semiconductor Products

STP5NB40

Obsolete

MOSFET N-CH 400V 4.7A TO220AB

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 400V 4.7A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	STP5NB40

Current - Continuous Drain (Id) @ 25°C	4.7 A
Drain to Source Voltage (Vdss)	400 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	20 nC
Input Capacitance (Ciss) (Max) @ Vds	405 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	80 W
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Drain to Source Voltage (Vdss)	FET Type	Supplier Device Package	Package / Case	Technology	Operating Temperature	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	Operating Temperature [Max]	Operating Temperature [Min]	Power Dissipation (Max)
STMicroelectronics STP5NB40	4.7 A	10 V	Through Hole	400 V	N-Channel	TO-220	TO-220-3	MOSFET (Metal Oxide)	150 °C	20 nC	5 V	405 pF	30 V	80 W
STMicroelectronics STP5N52K3	4.4 A	10 V	Through Hole	525 V	N-Channel	TO-220	TO-220-3	MOSFET (Metal Oxide)			4.5 V		30 V	70 W	14 nC	450 pF	1.5 Ohm	150 °C	-55 °C
STMicroelectronics STP5NK65Z	5 A	10 V	Through Hole	650 V	N-Channel	TO-220	TO-220-3	MOSFET (Metal Oxide)		35 nC	4.5 V		30 V			680 pF	1.8 Ohm	150 °C	-55 °C	85 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 1.23

General part information

N-Channel 400 V 4.7A (Tc) 80W (Tc) Through Hole TO-220

Technical documentation and resources