Zenode.ai Logo
Beta
STB18NF30
Discrete Semiconductor Products

STB18NF30

Active
STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 330 V, 160 MOHM TYP., 18 A STRIPFET II POWER MOSFET IN A D2PAK PACKAGE

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet+17
STB18NF30
Discrete Semiconductor Products

STB18NF30

Active
STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 330 V, 160 MOHM TYP., 18 A STRIPFET II POWER MOSFET IN A D2PAK PACKAGE

Deep-Dive with AI

DocumentsDatasheet+17

Technical Specifications

Parameters and characteristics for this part

SpecificationSTB18NF30
Current - Continuous Drain (Id) @ 25°C18 A
Drain to Source Voltage (Vdss)330 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs44 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds [Max]1650 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)150 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs180 mOhm
Supplier Device PackageTO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 478$ 3.31

Description

General part information

STB18NF30 Series

This Power MOSFET has been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.