STB18NF30 Series

Automotive-grade N-channel 330 V, 160 mOhm typ., 18 A STripFET II Power MOSFET in a D2PAK package

Catalog

Automotive-grade N-channel 330 V, 160 mOhm typ., 18 A STripFET II Power MOSFET in a D2PAK package

Part	Drain to Source Voltage (Vdss)	Grade	Technology	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	FET Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Vgs (Max)	Qualification	Rds On (Max) @ Id, Vgs
STMicroelectronics STB18NF30	330 V	Automotive	MOSFET (Metal Oxide)	10 V	175 °C	-55 °C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	150 W	44 nC	TO-263 (D2PAK)	N-Channel	1650 pF	Surface Mount	18 A	4 V	20 V	AEC-Q101	180 mOhm

Catalog

Automotive-grade N-channel 330 V, 160 mOhm typ., 18 A STripFET II Power MOSFET in a D2PAK package

Description

This Power MOSFET has been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.