Discrete Semiconductor Products

APT29F100L

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MOSFET N-CH 1000V 30A TO264

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Discrete Semiconductor Products

Active

MOSFET N-CH 1000V 30A TO264

Technical Specifications

Parameters and characteristics for this part

Specification	APT29F100L

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	1000 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	260 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	8500 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-264AA, TO-264-3
Power Dissipation (Max)	1040 W
Rds On (Max) @ Id, Vgs	460 mOhm
Supplier Device Package	TO-264
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Vgs(th) (Max) @ Id	Package / Case	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Rds On (Max) @ Id, Vgs	Supplier Device Package	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Technology
Microchip Technology APT29F100L	5 V	TO-264-3 TO-264AA	1000 V	30 A	1040 W	260 nC	10 V	8500 pF	N-Channel	460 mOhm	TO-264	Through Hole	-55 °C	150 °C	30 V	MOSFET (Metal Oxide)
Microchip Technology APT29F100B2	5 V	TO-247-3 Variant	1000 V	30 A	1040 W	260 nC	10 V	8500 pF	N-Channel	440 mOhm	T-MAX™ [B2]	Through Hole	-55 °C	150 °C	30 V	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	40	$ 13.80

General part information

N-Channel 1000 V 30A (Tc) 1040W (Tc) Through Hole TO-264

Technical documentation and resources

No documents available