APT29F100 Series

Catalog

MOSFET N-CH 1000V 30A TO264

Part	Vgs(th) (Max) @ Id	Package / Case	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Rds On (Max) @ Id, Vgs	Supplier Device Package	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Technology
Microchip Technology APT29F100L	5 V	TO-264-3 TO-264AA	1000 V	30 A	1040 W	260 nC	10 V	8500 pF	N-Channel	460 mOhm	TO-264	Through Hole	-55 °C	150 °C	30 V	MOSFET (Metal Oxide)
Microchip Technology APT29F100B2	5 V	TO-247-3 Variant	1000 V	30 A	1040 W	260 nC	10 V	8500 pF	N-Channel	440 mOhm	T-MAX™ [B2]	Through Hole	-55 °C	150 °C	30 V	MOSFET (Metal Oxide)