Zenode.ai Logo
Beta
SOT8001
Discrete Semiconductor Products

PMH550UPEH

Active
Nexperia USA Inc.

TRANSISTOR MOSFET P-CH 20V 0.8A 3-PIN DFN0606 T/R

Deep-Dive with AI

Search across all available documentation for this part.

SOT8001
Discrete Semiconductor Products

PMH550UPEH

Active
Nexperia USA Inc.

TRANSISTOR MOSFET P-CH 20V 0.8A 3-PIN DFN0606 T/R

Technical Specifications

Parameters and characteristics for this part

SpecificationPMH550UPEH
Current - Continuous Drain (Id) @ 25°C800 mA
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On) [Max]1.8 V
Drive Voltage (Max Rds On, Min Rds On) [Min]4.5 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs0.9 nC
Input Capacitance (Ciss) (Max) @ Vds54.8 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case3-XFDFN
Power Dissipation (Max)360 mW
Power Dissipation (Max)2.23 W
Rds On (Max) @ Id, Vgs640 mOhm
Supplier Device PackageDFN0606-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max) [Max]8 V
Vgs(th) (Max) @ Id950 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.34
10$ 0.24
100$ 0.12
500$ 0.10
1000$ 0.07
2000$ 0.06
5000$ 0.06
Digi-Reel® 1$ 0.34
10$ 0.24
100$ 0.12
500$ 0.10
1000$ 0.07
2000$ 0.06
5000$ 0.06
N/A 9528$ 0.37
Tape & Reel (TR) 10000$ 0.05
20000$ 0.04
30000$ 0.04
50000$ 0.04

Description

General part information

PMH550 Series

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.