Discrete Semiconductor Products

PMH550UNEH

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MOSFET N-CH 30V 770MA DFN0606-3

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Discrete Semiconductor Products

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MOSFET N-CH 30V 770MA DFN0606-3

Technical Specifications

Parameters and characteristics for this part

Specification	PMH550UNEH

Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	0.4 nC
Input Capacitance (Ciss) (Max) @ Vds	30.3 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	3-XFDFN
Power Dissipation (Max)	380 mW, 2.8 W
Rds On (Max) @ Id, Vgs	670 mOhm
Supplier Device Package	DFN0606-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	950 mV

Part	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	FET Type	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Package / Case	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Technology
Freescale Semiconductor - NXP PMH550UNEH	8 V	30.3 pF	0.4 nC	Surface Mount	N-Channel	950 mV	670 mOhm	30 V	3-XFDFN	2.8 W 380 mW	-55 °C	150 °C	1.5 V 4.5 V	DFN0606-3	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 770mA (Ta) 380mW (Ta), 2.8W (Tc) Surface Mount DFN0606-3

Technical documentation and resources