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DFN0606-3
Discrete Semiconductor Products

PMH550UNEH

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Nexperia USA Inc.

MOSFET N-CH 30V 770MA DFN0606-3

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DFN0606-3
Discrete Semiconductor Products

PMH550UNEH

Active
Nexperia USA Inc.

MOSFET N-CH 30V 770MA DFN0606-3

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationPMH550UNEH
Current - Continuous Drain (Id) @ 25°C770 mA
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)1.5 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]0.4 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]30.3 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case3-XFDFN
Power Dissipation (Max)380 mW
Power Dissipation (Max)2.8 W
Rds On (Max) @ Id, Vgs670 mOhm
Supplier Device PackageDFN0606-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max) [Max]8 V
Vgs(th) (Max) @ Id950 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.38
10$ 0.31
25$ 0.26
100$ 0.16
250$ 0.13
500$ 0.11
1000$ 0.07
2500$ 0.07
5000$ 0.06
Digi-Reel® 1$ 0.38
10$ 0.31
25$ 0.26
100$ 0.16
250$ 0.13
500$ 0.11
1000$ 0.07
2500$ 0.07
5000$ 0.06
N/A 0$ 0.14
Tape & Reel (TR) 10000$ 0.05
30000$ 0.05
50000$ 0.04
100000$ 0.04
250000$ 0.04

Description

General part information

PMH550 Series

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.