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30 V, N-channel Trench MOSFET
Description
AI
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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30 V, N-channel Trench MOSFET
30 V, N-channel Trench MOSFET
| Part | Vgs (Max) [Max] | Power Dissipation (Max) | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Operating Temperature [Max] | Operating Temperature [Min] | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds [Max] | Mounting Type | Technology | Vgs(th) (Max) @ Id | Package / Case | FET Type | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 8 V | 380 mW | 2.8 W | 770 mA | 670 mOhm | 150 °C | -55 °C | 1.5 V 4.5 V | DFN0606-3 | 0.4 nC | 30.3 pF | Surface Mount | MOSFET (Metal Oxide) | 950 mV | 3-XFDFN | N-Channel | 30 V | |||||
Nexperia USA Inc. | 8 V | 2.23 W | 800 mA | 640 mOhm | 150 °C | -55 °C | DFN0606-3 | Surface Mount | MOSFET (Metal Oxide) | 950 mV | 3-XFDFN | P-Channel | 20 V | 360 mW | 0.9 nC | 1.8 V | 4.5 V | 54.8 pF |