BDW93CPWD

Obsolete

TRANS NPN 100V TO220

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Discrete Semiconductor Products

Obsolete

TRANS NPN 100V TO220

Technical Specifications

Parameters and characteristics for this part

Specification	BDW93CPWD

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NPN Epitaxial Silicon Darlington Bipolar Transistor

Part	Package / Case	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic [custom]	Vce Saturation (Max) @ Ib, Ic [custom]	Vce Saturation (Max) @ Ib, Ic	Mounting Type	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Operating Temperature	Voltage - Collector Emitter Breakdown (Max) [Max]
ON Semiconductor BDW93A	TO-220-3	60 V	10 A	100 mA	3 V	Through Hole	1 mA	750 hFE	80 W	12 A	TO-220-3	150 °C
ON Semiconductor BDW93C	TO-220-3		10 A	100 mA	3 V	Through Hole	1 mA	750 hFE	80 W	12 A	TO-220-3	150 °C	100 V
ON Semiconductor BDW93CPWD

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

NPN Epitaxial Silicon Darlington Bipolar Transistor

Technical documentation and resources

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