Specification	BDW93C

Current - Collector (Ic) (Max) [Max]	12 A
Current - Collector Cutoff (Max) [Max]	1 mA
DC Current Gain (hFE) (Min) @ Ic, Vce	750 hFE
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power - Max [Max]	80 W
Supplier Device Package	TO-220-3
Vce Saturation (Max) @ Ib, Ic	3 V
Vce Saturation (Max) @ Ib, Ic [custom]	10 A
Vce Saturation (Max) @ Ib, Ic [custom]	100 mA
Voltage - Collector Emitter Breakdown (Max) [Max]	100 V

BDW93C Series

NPN Epitaxial Silicon Darlington Bipolar Transistor

Part	Package / Case	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic [custom]	Vce Saturation (Max) @ Ib, Ic [custom]	Vce Saturation (Max) @ Ib, Ic	Mounting Type	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Operating Temperature	Voltage - Collector Emitter Breakdown (Max) [Max]
ON Semiconductor BDW93A	TO-220-3	60 V	10 A	100 mA	3 V	Through Hole	1 mA	750 hFE	80 W	12 A	TO-220-3	150 °C
ON Semiconductor BDW93C	TO-220-3		10 A	100 mA	3 V	Through Hole	1 mA	750 hFE	80 W	12 A	TO-220-3	150 °C	100 V
ON Semiconductor BDW93CPWD

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

NPN Epitaxial Silicon Darlington Bipolar Transistor

Technical documentation and resources