Catalog
NPN Epitaxial Silicon Darlington Bipolar Transistor
Key Features
• Power Darlington Bipolar Transistor
• Complement to BDW23, BDW23A, BDW23B and BDW23C respectively
Description
AI
NPN Epitaxial Silicon Darlington Bipolar Transistor
NPN Epitaxial Silicon Darlington Bipolar Transistor
NPN Epitaxial Silicon Darlington Bipolar Transistor
| Part | Package / Case | Voltage - Collector Emitter Breakdown (Max) | Vce Saturation (Max) @ Ib, Ic [custom] | Vce Saturation (Max) @ Ib, Ic [custom] | Vce Saturation (Max) @ Ib, Ic | Mounting Type | Current - Collector Cutoff (Max) [Max] | DC Current Gain (hFE) (Min) @ Ic, Vce | Power - Max [Max] | Current - Collector (Ic) (Max) [Max] | Supplier Device Package | Operating Temperature | Voltage - Collector Emitter Breakdown (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ON Semiconductor | TO-220-3 | 60 V | 10 A | 100 mA | 3 V | Through Hole | 1 mA | 750 hFE | 80 W | 12 A | TO-220-3 | 150 °C | |
ON Semiconductor | TO-220-3 | 10 A | 100 mA | 3 V | Through Hole | 1 mA | 750 hFE | 80 W | 12 A | TO-220-3 | 150 °C | 100 V | |
ON Semiconductor |