Discrete Semiconductor Products

ECH8315-TL-W

Obsolete

ON Semiconductor

MOSFET P-CH 30V 7.5A SOT28FL

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Discrete Semiconductor Products

ECH8315-TL-W

Obsolete

ON Semiconductor

MOSFET P-CH 30V 7.5A SOT28FL

Deep-Dive with AI

DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	ECH8315-TL-W

Current - Continuous Drain (Id) @ 25°C	7.5 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	18 nC
Mounting Type	Surface Mount
Operating Temperature	150 °C
Power Dissipation (Max)	1.5 W
Rds On (Max) @ Id, Vgs	25 mOhm
Supplier Device Package	SOT-28FL/ECH8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.6 V

ECH8315 Series

P-Channel Power MOSFET, -30V, -7.5A, 25mΩ

Part	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Operating Temperature	Technology	FET Type	Mounting Type	Vgs (Max)	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id
ON Semiconductor ECH8315-TL-H	1.5 W	7.5 A	30 V	150 °C	MOSFET (Metal Oxide)	P-Channel	Surface Mount	20 V	8-ECH	4 V	10 V	25 mOhm	18 nC
ON Semiconductor ECH8315-TL-W	1.5 W	7.5 A	30 V	150 °C	MOSFET (Metal Oxide)	P-Channel	Surface Mount	20 V	SOT-28FL/ECH8	4 V	10 V	25 mOhm	18 nC	2.6 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

ECH8315 Series

This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to low on resistance. This devices is suitable for applications with low on resistance requirements.

Documents

Technical documentation and resources