ECH8315 Series

P-Channel Power MOSFET, -30V, -7.5A, 25mΩ

Catalog

P-Channel Power MOSFET, -30V, -7.5A, 25mΩ

Part	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Operating Temperature	Technology	FET Type	Mounting Type	Vgs (Max)	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id
ON Semiconductor ECH8315-TL-H	1.5 W	7.5 A	30 V	150 °C	MOSFET (Metal Oxide)	P-Channel	Surface Mount	20 V	8-ECH	4 V	10 V	25 mOhm	18 nC
ON Semiconductor ECH8315-TL-W	1.5 W	7.5 A	30 V	150 °C	MOSFET (Metal Oxide)	P-Channel	Surface Mount	20 V	SOT-28FL/ECH8	4 V	10 V	25 mOhm	18 nC	2.6 V

Catalog

P-Channel Power MOSFET, -30V, -7.5A, 25mΩ

Key Features

• Low On-Resistance

• ESD Diode-Protected Gate

• RoHS compliance

• 4.0V drive

Description

This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to low on resistance. This devices is suitable for applications with low on resistance requirements.